Anisotropic resistivity and electroresistance in epitaxial La0.3Pr0.4Ca0.3MnO3 thin films

The effects of anisotropic strain (AS) are considered in La 0.3 Pr 0.4 Ca 0.3 MnO 3 films produced by pulsed laser deposition on [001]-oriented NdGaO 3 substrates via magnetic and resistivity measurements along with the two orthogonal in-plane directions. The anisotropic resistance is manifested wit...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2022-03, Vol.128 (3), Article 175
Main Authors: Zarifi, M., Kameli, P., Ghotbi Varzaneh, A., Hosseini, E., Norouzi-Inallu, M., Abbasi Eskandari, M., Ahmadvand, H.
Format: Article
Language:English
Subjects:
Antiferromagnetism
Applied physics
Characterization and Evaluation of Materials
Condensed Matter Physics
Electrical resistivity
Ferromagnetism
Machines
Manufacturing
Materials science
Nanotechnology
Optical and Electronic Materials
Percolation
Phase separation
Physics
Physics and Astronomy
Preferred orientation
Processes
Pulsed laser deposition
Pulsed lasers
Substrates
Surfaces and Interfaces
Temperature dependence
Thickness
Thin Films
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Summary:The effects of anisotropic strain (AS) are considered in La 0.3 Pr 0.4 Ca 0.3 MnO 3 films produced by pulsed laser deposition on [001]-oriented NdGaO 3 substrates via magnetic and resistivity measurements along with the two orthogonal in-plane directions. The anisotropic resistance is manifested with various degrees due to the different strengths of anisotropic strain that can be controlled with film thicknesses. The temperature-dependent resistivity was measured along with the two orthogonal directions. The anisotropic resistivity (AR) originated from different percolation paths in films and reached an extraordinary value of ~ 10 7 % for the film, with a thickness of 50 nm. On the other hand, the enhanced AR reveals that the AS induces electronic phase separation with ferromagnetic metallic entities’ appearance with preferred orientation along (100) direction in an antiferromagnetic insulating background. Besides, we examined the effects of electric current on the resistivity of films. It is found that the application of larger currents results in a dramatic reduction of film resistance, and the extraordinary value of the electroresistance (~ 97%) was obtained by increasing the current from 0.01 to 10 µA. We attribute this behavior to the percolative channels with a width comparable to the mesoscopic phase-separated domains.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-022-05292-8