Research implementing different dopants (M = Al, Sn, and Eu) on the properties of Schottky diodes with structure TCO/CdS/C and TCO/CdS:M/C

•The doping effect of Al, Sn, and Eu in CdS was systematically studied.•Crystallites decreases when a metallic cation is present.•Al or Eu doping induces a grain size increment in CdS film.•Band gap shift is produced due to structural changes on doped films.•Best diode perform was obtained with Cd:A...

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Bibliographic Details
Published in:Journal of alloys and compounds 2022-02, Vol.894, p.162369, Article 162369
Main Authors: Willars-Rodríguez, F.J., Chávez-Urbiola, I.R., Melgoza-Ramírez, M.L., Trujillo, L.E., Chávez-Urbiola, E.A., Ramírez-Bon, R., Vorobiev, P., Vorobiev, Yu.V.
Format: Article
Language:English
Subjects:
Aluminum
Blue shift
Cadmium sulfide
Chemical bath deposition process
Converters
Crystallites
Device performance
Dopants
Doping
Doping effect
Doppler effect
Electronic devices
Energy bands
Energy gap
Europium
Free ammonia
Grain size
Optoelectronic devices
Photodiode
Photodiodes
Photoelectric effect
Photoelectricity
Photosensitivity
Potential barriers
Red shift
Schottky diodes
Thin films
Tin
Ultraviolet radiation
X ray photoelectron spectroscopy
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Summary:•The doping effect of Al, Sn, and Eu in CdS was systematically studied.•Crystallites decreases when a metallic cation is present.•Al or Eu doping induces a grain size increment in CdS film.•Band gap shift is produced due to structural changes on doped films.•Best diode perform was obtained with Cd:Al. A metal-semiconductor interface is an integral part of numerous electronic devices such as Schottky barrier diodes, photodetectors, photovoltaic detectors, photoelectric converters for UV radiation, among others. On the other hand, semiconductor thin films of cadmium sulfide have been applied to several electronic devices. This study presents the synthesis of semiconductor thin films of pure cadmium sulfide and those doped with Al, Sn, and Eu by a chemical bath deposition technique. XRD, SEM, EDS, XPS, UV-Vis spectroscopy, I-V, and photocurrent measurement analyzed these semiconductor thin films. Afterwards, the doped and undoped CdS thin films were applied to the manufacture of Schottky diodes. The doped CdS thin films reveals differences in the size of the crystallites, which decreased by 5.7%, 11.5%, and 60.1% after doping with aluminum, tin, and europium, respectively. The CdS thin films show morphological differences, decreasing grain size by 5.3% in the case of tin doping and increasing by 21.9% with aluminum and 32.6% after being doped with europium. Additionally, the energy bandgap of the doped CdS thin films show a blue shift, except when doped with Eu, which shows a red shift. This enables the design of window layers by choosing the suitable dopant of CdS. The effect of the CdS doping on the electrical photoresponse of the Schottky diodes was also analyzed. Due to the incorporation of dopants, the photoresponse of the aluminum-doped CdS Schottky diodes improved by 176% compared to its undoped counterpart and by up to 493% with other reports in the literature. The Schottky diodes manufactured in this work show variation in height of the potential barrier, increasing by 6% in the case of aluminum doping and decreasing by 5% and 25% after being doped with europium and tin respectively. These results demonstrated the beneficial impact of dopants on the characteristics of the CdS-based Schottky diodes and elaborated photodiodes, exhibiting an impressive enhancement in their photoresponse, in the potential barrier reached for photosensitivity and in the energy band gap value. Overall, our extensive study reveals that there is great potential in the design
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2021.162369