Controllable vapor growth of CsPbBr3/CdS 1D heterostructures with type-II band alignment for high-performance self-powered photodetector

The controllable growth of semiconductor heterostructures with suitable band alignment and morphology is crucial for the construction of high-performance optoelectronic devices, which is limited to the traditional semiconductor families. Here, high-quality CsPbBr3/CdS heterostructures with a unique...

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Bibliographic Details
Published in:CrystEngComm 2022-01, Vol.24 (2), p.275-283
Main Authors: Fan, Chao, Yang, Ke, Xu, Xing, Zhuodong Qi, Jiang, Sha, Xia, Mingxia, Zhang, Qinglin
Format: Article
Language:English
Subjects:
Alignment
Bias
Heterojunctions
Heterostructures
Morphology
Optoelectronic devices
Photometers
Physical vapor deposition
Power consumption
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Summary:The controllable growth of semiconductor heterostructures with suitable band alignment and morphology is crucial for the construction of high-performance optoelectronic devices, which is limited to the traditional semiconductor families. Here, high-quality CsPbBr3/CdS heterostructures with a unique 1D morphology and type-II band alignment have been obtained through a 2-step physical vapor deposition strategy, in which CsPbBr3 microcubes were grown on the side wall of pre-grown free-standing CdS microwires. Owing to the effective separation and transportation of photogenerated carriers at the CsPbBr3/CdS heterojunction with type-II band alignment, a photodetector based on a single CsPbBr3/CdS 1D heterostructure showed high self-powered performances (without additional bias supplies), including Ion/Ioff ratio of 3 × 103, photoresponsivity of 24.5 mA W−1, detectivity of 1.09 × 1012 Jones, detectable spectral range from 350 nm to 530 nm and response speeds of 1.5 ms (rise time) and 14.9 ms (decay time) at a bias of 0 V. This work provides an effective way for the controllable growth of high-quality CsPbX3-based 1D heterostructures, which promotes their practical applications in optoelectronic devices without power consumption.
ISSN:1466-8033
DOI:10.1039/d1ce01409a