Non-volatile programmable homogeneous lateral MoTe2 junction for multi-bit flash memory and high-performance optoelectronics

Flash memories and semiconductor p-n junctions are two elementary but incompatible building blocks of most electronic and optoelectronic devices. The pressing demand to efficiently transfer massive data between memories and logic circuits, as well as for high data storage capability and device integ...

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Bibliographic Details
Published in:Nano research 2020-12, Vol.13 (12), p.3445-3451
Main Authors: Wu, Enxiu, Xie, Yuan, Wang, Shijie, Zhang, Daihua, Hu, Xiaodong, Liu, Jing
Format: Article
Language:English
Subjects:
Atomic/Molecular Structure and Spectra
Biomedicine
Biotechnology
Boron
Boron nitride
Carrier density
Chemistry and Materials Science
Computer applications
Condensed Matter Physics
Data storage
Doping
Electrical junctions
Flash memory (computers)
Graphene
Heterostructures
Homojunctions
Logic circuits
Materials Science
Memory devices
Molybdenum compounds
Nanotechnology
Optoelectronic devices
P-n junctions
Photovoltaics
Polarity
Research Article
Retention time
Semiconductors
Spatial distribution
Tellurides
Transistors
Two dimensional materials
Ultraviolet radiation
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Summary:Flash memories and semiconductor p-n junctions are two elementary but incompatible building blocks of most electronic and optoelectronic devices. The pressing demand to efficiently transfer massive data between memories and logic circuits, as well as for high data storage capability and device integration density, has fueled the rapid growth of technique and material innovations. Two-dimensional (2D) materials are considered as one of the most promising candidates to solve this challenge. However, a key aspect for 2D materials to build functional devices requires effective and accurate control of the carrier polarity, concentration and spatial distribution in the atomically thin structures. Here, a non-volatile opto-electrical doping approach is demonstrated, which enables reversibly writing spatially resolved doping patterns in the MoTe 2 conductance channel through a MoTe 2 /hexagonal boron nitride (h-BN) heterostructure. Based on the doping effect induced by the combination of electrostatic modulation and ultraviolet light illumination, a 3-bit flash memory and various homojunctions on the same MoTe 2 /BN heterostructure are successfully developed. The flash memory achieved 8 well distinguished memory states with a maximum on/off ratio over 10 4 . Each state showed negligible decay during the retention time of 2,400 s. The heterostructure also allowed the formation of p-p, n-n, p-n, and n-p homojunctions and the free transition among these states. The MoTe 2 p-n homojunction with a rectification ratio of 10 3 exhibited excellent photodetection and photovoltaic performance. Having the memory device and p-n junction built on the same structure makes it possible to bring memory and computational circuit on the same chip, one step further to realize near-memory computing.
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-020-3041-0