Low temperature anisotropic photoresponse study of bulk ZrS3 single crystal

[Display omitted] •The ZrS3 single crystals were grown by direct vapor transport technique.•The anisotropic photo response studies were carried out under white light illumination at room temperature.•The grown material was explored for photo detection properties inlow temperature condition ranging f...

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 2021-11, Vol.331, p.112969, Article 112969
Main Authors: Patel, Anand, Limberkar, Chaitanya, Patel, Kunjal, Bhakhar, Sanjay, Patel, K.D., Solanki, G.K., Pathak, V.M.
Format: Article
Language:English
Subjects:
Anisotropy
Crystal growth
Crystal structure
Crystallinity
Crystallography
Diffraction
Electron microscopy
Illumination
Incident light
Low temperature
Luminous intensity
Mathematical analysis
Morphology
Parameter sensitivity
Photodetector
Pulse photoresponse
Raman spectroscopy
Room temperature
Scanning electron microscopy
Single crystal
Single crystals
Studies
Temperature
Transmission electron microscopy
White light
Zirconium
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Summary:[Display omitted] •The ZrS3 single crystals were grown by direct vapor transport technique.•The anisotropic photo response studies were carried out under white light illumination at room temperature.•The grown material was explored for photo detection properties inlow temperature condition ranging from 300 K – 100 K. The present work shows zirconium trisulphide (ZrS3) single crystals-based photodetector functionality synthesized through the Direct Vapor Transport (DVT) technique. The elemental-chemical, surface morphology, structural phase, crystallinity and vibrational modes of the crystals were analyzed using Energy Dispersive Analysis of X-rays (EDAX), Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), Transmission Electron Microscopy (TEM) and Raman Spectroscopy respectively. These characterizations revealed the pure and layered crystals grown having a monoclinic phase with good crystallinity. Time-dependent photo-response of the detector fabricated from ZrS3 single crystals possessing smooth surface was recorded under the illumination of white light for different incident illumination levels (20 mW/cm2 to 120 mW/cm2) at room temperature. Further, a low-temperature photo-response upto 100 K for the incident light intensity of 120 mW/cm2 was carried out to validate the stability and durability of the detector. Typical detector parameters like responsivity, detectivity, sensitivity and response times were calculated and their variations are studied thoroughly concerning incident intensity and low-temperature. Furthermore, owing to the layered structure of the material, the photo-response of the device was recorded in both parallel (⊥to c-axis) and perpendicular (║to c-axis) direction of the crystallographic b-axis and device parameters were calculated at the room as well as low temperatures. The device exhibited strong anisotropy that originated from the layered structure of the grown crystals and involved an anisotropic charge conduction mechanism at the room as well as low temperatures.
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2021.112969