Gamma-ray irradiation effects on capacitance and conductance of graphene-based Schottky diode

The purpose of this study is to determine the effects of gamma (γ)-ray irradiation on capacitance and conductance features of Al/Graphene/Al2O3/p-Si structure. Graphene has been grown on copper foil by the Chemical Vapor Deposition (CVD) method and transferred onto Al2O3/p-Si by the wet transfer met...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2021-11, Vol.621, p.413306, Article 413306
Main Authors: Efil Kutluoğlu, Esra, Öz Orhan, Elif, Bayram, Özkan, Bilge Ocak, Sema
Format: Article
Language:English
Subjects:
Aluminum oxide
Capacitance
Chemical vapor deposition
Conductance
CVD
Gamma rays
Gamma-ray irradiation
Graphene
Interface states
Metal foils
Radiation
Radiation dosage
Schottky diodes
Silicon
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Summary:The purpose of this study is to determine the effects of gamma (γ)-ray irradiation on capacitance and conductance features of Al/Graphene/Al2O3/p-Si structure. Graphene has been grown on copper foil by the Chemical Vapor Deposition (CVD) method and transferred onto Al2O3/p-Si by the wet transfer method. After Al/Graphene/Al2O3/p-Si structure has been exposed to 30 kGy and 60 kGy γ-ray irradiation, capacitance, and conductance measurements have been accomplished at 300 K. Electrical parameters have been compared before and after γ-ray irradiation for 50 kHz and 500 kHz. These results have been confirmed that capacitance and conductance values have increased after γ-ray irradiation and, have decreased when the radiation dose was increased from 30 kGy to 60 kGy. It has been observed that series resistance has decreased after 30 kGy radiation dose and has increased with increasing radiation dose. •Al/Graphene/Al2O3/p-Si Schottky diode is formed.•The G-V and C–V measurements of Al/Graphene/Al2O3/p-Si diode were done before and after irradiation at 50 kHz and 500 kHz.•The electrical characteristics of the Al/Gr/Al2O3/p-Si diode change significantly with both the frequency and gamma-ray irradiation.•The gamma-irradiation has a significant effect on the electronic properties of graphene-based-structure useable in electronic applications.•The obtained results suggest that the fabricated diode can be used as a means of controlling material.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2021.413306