Growth of Graphene Nanoflakes/h‐BN Heterostructures

2D materials such as graphene, hexagonal boron nitride (h‐BN), or transition metal dichalcogenides, and their heterostacks are gaining increasing interest because of their extraordinary properties, which can range from superconductivity to large charge carrier mobilities. In this paper, the electron...

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Bibliographic Details
Published in:Advanced materials interfaces 2021-10, Vol.8 (20), p.n/a
Main Authors: Küster, Kathrin, Hooshmand, Zahra, Rosenblatt, Daniel Pablo, Koslowski, Sebastian, Le, Duy, Starke, Ulrich, Rahman, Talat S., Kern, Klaus, Schlickum, Uta
Format: Article
Language:English
Subjects:
2D heterostructures
Boron nitride
Carbon
Chemical properties
Current carriers
density functional theory
Diffusion
Graphene
Heterostructures
hexagonal boron nitride
Impurities
Rhodium
scanning tunneling microscopy and spectroscopy
Steering
Superconductivity
Transition metal compounds
Two dimensional materials
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Summary:2D materials such as graphene, hexagonal boron nitride (h‐BN), or transition metal dichalcogenides, and their heterostacks are gaining increasing interest because of their extraordinary properties, which can range from superconductivity to large charge carrier mobilities. In this paper, the electronic and structural modifications of h‐BN on Rh(111) are investigated by the intercalation of carbon forming graphene nanoflakes between the h‐BN and the Rh(111) surface. The carbon atoms—natural impurities in Rh bulk crystals—diffuse to the surface during the h‐BN growth and segregate there during cooling. The graphene nanoflakes are present at particular sites under the wires of the h‐BN nanomesh leading to an altered appearance of the Moiré pattern and modified electronic and chemical properties. Thus, a novel fabrication route of graphene nanoflakes located in a heterostack between Rh(111) and h‐BN is shown by steering the segregation of carbon impurities at the rhodium surface. A 2D heterostack containing graphene nanoflakes at specific sites under a hexagonal boron nitride (h‐BN) nanomesh is formed by segregation of carbon, during h‐BN growth. The graphene nanoflakes change the electronic and chemical properties of the h‐BN, which is shown theoretically and experimentally by probing the field‐emission resonances and by adsorption of pentacene.
ISSN:2196-7350
2196-7350
DOI:10.1002/admi.202100766