Distorted octahedral site occupation-induced high-efficiency broadband near-infrared emission in LiScGe2O6:Cr3+ phosphor

The discovery of high-efficiency broadband near-infrared (NIR) emission phosphors for light-emitting diodes (pc-LEDs) is of importance for optoelectronic devices and their emerging applications. Herein, a highly efficient broadband NIR emission phosphor LiScGe2O6:Cr3+ peaking at 886 nm with a full w...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2021-10, Vol.9 (39), p.13640-13646
Main Authors: Chen, X H, Song, E H, Zhou, Y Y, He, F Q, Yang, J Q, Zhang, Q Y
Format: Article
Language:English
Subjects:
Broadband
Efficiency
Light emitting diodes
Near infrared radiation
Optoelectronic devices
Phosphors
Photoelectricity
Quantum efficiency
Trivalent chromium
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Summary:The discovery of high-efficiency broadband near-infrared (NIR) emission phosphors for light-emitting diodes (pc-LEDs) is of importance for optoelectronic devices and their emerging applications. Herein, a highly efficient broadband NIR emission phosphor LiScGe2O6:Cr3+ peaking at 886 nm with a full width at half maximum (FWHM) of 160 nm (∼2230 cm−1) is developed via a distorted octahedral site occupation strategy. Upon 480 nm blue-light excitation, the optimal phosphor composition LiSc0.93Ge2O6:0.07Cr3+ presents an internal quantum efficiency (IQE) of 72.6% and high external quantum efficiency (EQE) of 39.9%. A NIR LED is fabricated based on this phosphor and a blue InGaN chip, which shows a maximum NIR output power of 407.3 mW at 300 mA driving current with a photoelectric conversion efficiency of ∼8.9%, suggesting its high promise for night-vision applications. This work provides a new strategy for achieving high-efficiency Cr3+-doped NIR emission phosphors.
ISSN:2050-7526
2050-7534
DOI:10.1039/d1tc03057d