Improved Performance of Titanium Oxide/Silicon Oxide Electron‐Selective Contacts by Implementation of Magnesium Interlayers

The impact of the implementation of magnesium interlayer and the layer thickness (tTiOx) of titanium oxide on the electrical properties of TiOx/SiOy/Si heterojunctions is investigated to improve electron transport for use in silicon heterojunction solar cells. The passivation performance is improved...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2021-10, Vol.218 (19), p.n/a
Main Authors: Nakagawa, Yuta, Gotoh, Kazuhiro, Inoue, Tetsuya, Kurokawa, Yasuyoshi, Usami, Noritaka
Format: Article
Language:English
Subjects:
Circuits
Contact resistance
Electric contacts
Electrical properties
Electron transport
electron-selective contacts
Energy levels
Heterojunctions
Interfacial energy
Interlayers
Magnesium
magnesium interlayers
Passivity
Photovoltaic cells
Selectivity
silicon oxide
Silicon oxides
silicon solar cells
Solar cells
Stacking
Thickness
titanium oxide
Titanium oxides
Transport properties
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Summary:The impact of the implementation of magnesium interlayer and the layer thickness (tTiOx) of titanium oxide on the electrical properties of TiOx/SiOy/Si heterojunctions is investigated to improve electron transport for use in silicon heterojunction solar cells. The passivation performance is improved with increasing tTiOx. For the samples with Mg interlayer, ohmic contact can be attained for the thicker TiOx layer compared with the sample without Mg interlayer. Schottky contact is mitigated by the TiOx/SiOy stacking layers and Mg interlayer, attributed to the reduction of interfacial energy level by TiOx/SiOy stacking layers and enhanced downward band bending by Mg interlayer. The open‐circuit voltage and fill factor of the solar cells are improved by inserting the TiOx/SiOy stack and the Mg interlayer, indicating that the electron selectivity is enhanced. Excellent surface passivation and transport properties can be achieved by controlling TiOx layer thickness and using the Mg interlayer. The impact of the magnesium interlayer on the electrical properties of the TiOx/SiOy heterocontact is investigated to improve the transport properties of the heterostructure. Combining the TiOx/SiOx stack and Mg interlayer results in mitigation of Schottky contact, and thus electron transport is improved.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.202100296