Design of Trench Gate GaN Power MOSFET using Al2O3 Gate Oxide

A trench gate type 600V GaN power MOSFET structure with Al2O3 gate oxide has been designed and simulated for obtaining optimum device and process parameters for fabrication. As a result, when the trench gate depth is 2.4 μm, the breakdown voltage is 620V and the on resistance is 0.4Ωcm2, which is re...

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Bibliographic Details
Main Authors: Ey Goo Kang, Kim, Yong Tae
Format: Conference Proceeding
Language:English
Subjects:
Aluminum oxide
Electrons
Gallium nitrides
MOSFETs
Physics
Process parameters
Online Access:Get full text
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Summary:A trench gate type 600V GaN power MOSFET structure with Al2O3 gate oxide has been designed and simulated for obtaining optimum device and process parameters for fabrication. As a result, when the trench gate depth is 2.4 μm, the breakdown voltage is 620V and the on resistance is 0.4Ωcm2, which is relatively very low on resistance comparing with the same trench gate Si power MOSFET structure.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/352/1/012025