Microstructural characterisation of Bi2Se3 thin films

The microstructure of Bi2Se3 thin films grown by molecular beam epitaxy on Si(111), InP(111)B and Fe-doped InP(111)B substrates has been studied in detail using scanning transmission electron microscopy. Films grown on Si(111) and InP(111)B substrates show the formation of twin domains: rotation twi...

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Bibliographic Details
Main Authors: Tarakina, N V, Schreyeck, S, Borzenko, T, Grauer, S, Schumacher, C, Karczewski, G, Gould, C, Brunner, K, Buhmann, H, Molenkamp, L W
Format: Conference Proceeding
Language:English
Subjects:
Atomic force microscopy
Crystallization
Epitaxial growth
Grain boundaries
Indium phosphides
Microscopes
Microscopy
Microstructure
Molecular beam epitaxy
Physics
Scanning transmission electron microscopy
Silicon substrates
Thin films
Twins
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Summary:The microstructure of Bi2Se3 thin films grown by molecular beam epitaxy on Si(111), InP(111)B and Fe-doped InP(111)B substrates has been studied in detail using scanning transmission electron microscopy. Films grown on Si(111) and InP(111)B substrates show the formation of twin domains: rotation twins (with the grain boundary perpendicular to the substrate) and lamellar twins (with the grain boundary parallel to the substrate). The presence of twins was confirmed by atomic-force microscopy (AFM) and X-ray diffraction (XRD). At the interface between Bi2Se3 film and Si(111) or InP(111)B substrates poorly crystallized layers of about 1 nm and 1.8 nm thickness, respectively, followed by well-crystallized Bi2Se3 layers, were found. The use of a Fe-doped InP (111) substrate with a rough surface enables the suppression of twin formation.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/471/1/012043