Effects Of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode

In this study is investigated of effects of the γ-radiation on current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-Si/Au-Sb Schottky diode at room temperature. Initially, the ohmic contact has been made on n-Si crystal with Au-Sb alloy. Then, the rectifier contact is made by...

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Bibliographic Details
Published in:Journal of physics. Conference series 2016-04, Vol.707 (1), p.12018
Main Authors: Salari, M. Abdolahpour, Şenarslan, E., Güzeldir, B., Sağlam, M.
Format: Article
Language:English
Subjects:
Capacitance-voltage characteristics
Contact resistance
Diameters
Electric contacts
Gold
Physics
Radiation
Room temperature
Schottky diodes
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Summary:In this study is investigated of effects of the γ-radiation on current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-Si/Au-Sb Schottky diode at room temperature. Initially, the ohmic contact has been made on n-Si crystal with Au-Sb alloy. Then, the rectifier contact is made by evaporation Au metal diameter of about 1.0 mm to the other surface of n-Si in turbo molecular pump at about 10-7 Torr. The I-V measurements of this diode performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C-V measurements were performed with HP 4192A (50-13 MHz) LF Impedance Analyzer at room temperature and in dark. Then, this diode was subjected to γ-radiation, and I-V and C-V measurements were taken again. Consequently, examines the difference between these two measurements.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/707/1/012018