Investigation of the effect of surface passivation on microdisk lasers based on InGaAsN/GaAs quantum well active region

Microdisk lasers based on three InGaAsN/GaAs quantum wells with different types of surface passivation are fabricated and studied under optical pumping. Room temperature lasing at 1.3 μm in 7 μm in diameter microdisks with InGaAsN/GaAs QW is demonstrated. We evaluated the thermal resistance as 1 °C/...

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Bibliographic Details
Published in:Journal of physics. Conference series 2017-11, Vol.917 (5), p.52002
Main Authors: Moiseev, E I, Kryzhanovskaya, N V, Maximov, M V, Mozharov, A M, Gudovskikh, A S, Polushkin, A S, Mukhin, I S, Guseva, Yu A, Kulagina, M M, Troshkov, S I, Niemi, T, Isoaho, R, Guina, M, Zhukov, A E
Format: Article
Language:English
Subjects:
Active regions (lasers)
Lasers
Optical pumping
Passivity
Physics
Quantum wells
Room temperature
Thermal resistance
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Summary:Microdisk lasers based on three InGaAsN/GaAs quantum wells with different types of surface passivation are fabricated and studied under optical pumping. Room temperature lasing at 1.3 μm in 7 μm in diameter microdisks with InGaAsN/GaAs QW is demonstrated. We evaluated the thermal resistance as 1 °C/mW.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/917/5/052002