Synthesis and Physical Property Measurements in Misfit Transition Metal Dichalcogenide (SbS)1.16TaS2

We report the single crystal growth and superconducting transition of a misfit layered compound (SbS)1.16TaS2. We succeed in the single crystal growth with flux method. The electrical resistivity measurements revealed the superconducting transition temperature of this material as 2.9 K, which was co...

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Bibliographic Details
Published in:Journal of physics. Conference series 2020-07, Vol.1590 (1)
Main Authors: Doyama, S, Ohta, S, Sakata, H
Format: Article
Language:English
Subjects:
Chalcogenides
Crystal growth
Physics
Scanning tunneling microscopy
Single crystals
Superconductivity
Transition metal compounds
Transition temperature
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Summary:We report the single crystal growth and superconducting transition of a misfit layered compound (SbS)1.16TaS2. We succeed in the single crystal growth with flux method. The electrical resistivity measurements revealed the superconducting transition temperature of this material as 2.9 K, which was consistent with the previous research. Scanning tunneling microscopy measurements show two kinds of surfaces corresponding to TaS2 and SbS layers, indicating successful growth of the single crystal consist of stacking of these layers.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1590/1/012005