XPS analysis of metallic wetting layer in In/GaAs system obtained at different growth temperatures

In this paper we investigate the processes of nucleation and growth of In/GaAs(001) nanostructures by droplet epitaxy. We determined the temperature dependence of the wetting layer thickness. Using the X-ray photoelectron spectroscopy technique to examine of samples with In/GaAs droplet nanostructur...

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Bibliographic Details
Published in:Journal of physics. Conference series 2019-12, Vol.1410 (1), p.12045
Main Authors: Eremenko, M M, Balakirev, S V, Chernenko, N E, Ageev, O A, Solodovnik, M S
Format: Article
Language:English
Subjects:
Droplets
Epitaxial growth
Gallium arsenide
Nanostructure
Nucleation
Photoelectrons
Physics
Temperature dependence
Thickness
Wetting
X ray photoelectron spectroscopy
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Summary:In this paper we investigate the processes of nucleation and growth of In/GaAs(001) nanostructures by droplet epitaxy. We determined the temperature dependence of the wetting layer thickness. Using the X-ray photoelectron spectroscopy technique to examine of samples with In/GaAs droplet nanostructures formed under different conditions we experimentally confirm an increase in the metallic wetting layer thickness with a decrease in the deposition temperature. Analysis of the data obtained shows that droplet nanostructures consist of In are without Ga impurity.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1410/1/012045