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XPS analysis of metallic wetting layer in In/GaAs system obtained at different growth temperatures
In this paper we investigate the processes of nucleation and growth of In/GaAs(001) nanostructures by droplet epitaxy. We determined the temperature dependence of the wetting layer thickness. Using the X-ray photoelectron spectroscopy technique to examine of samples with In/GaAs droplet nanostructur...
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Published in: | Journal of physics. Conference series 2019-12, Vol.1410 (1), p.12045 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this paper we investigate the processes of nucleation and growth of In/GaAs(001) nanostructures by droplet epitaxy. We determined the temperature dependence of the wetting layer thickness. Using the X-ray photoelectron spectroscopy technique to examine of samples with In/GaAs droplet nanostructures formed under different conditions we experimentally confirm an increase in the metallic wetting layer thickness with a decrease in the deposition temperature. Analysis of the data obtained shows that droplet nanostructures consist of In are without Ga impurity. |
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ISSN: | 1742-6588 1742-6596 |
DOI: | 10.1088/1742-6596/1410/1/012045 |