Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory

The HfZrO x (HZO) ferroelectric material is a promising material for ferroelectric memory and is compatible with the semiconductor process for ferroelectric random access memory (FeRAM) and negative capacitance field effect transistor. However, defects often exist in the grain boundary to influence...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2021-08, Vol.68 (8), p.3838-3842
Main Authors: Chen, Wen-Chung, Tan, Yung-Fang, Lin, Shih-Kai, Zhang, Yong-Ci, Chang, Kai-Chun, Lin, Yun-Hsuan, Yeh, Chien-Hung, Wu, Chung-Wei, Yeh, Yu-Hsuan, Wang, Kao-Yuan, Huang, Hui-Chun, Tsai, Tsung-Ming, Huang, Jen-Wei, Chang, Ting-Chang
Format: Article
Language:English
Subjects:
Capacitance
Crystal defects
Deposition
Electrical measurement
Ferroelectric materials
Ferroelectricity
Field effect transistors
Grain boundaries
Grain size
Image transmission
Low temperature
Random access memory
Reliability
Semiconductor devices
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Summary:The HfZrO x (HZO) ferroelectric material is a promising material for ferroelectric memory and is compatible with the semiconductor process for ferroelectric random access memory (FeRAM) and negative capacitance field effect transistor. However, defects often exist in the grain boundary to influence the performance or reliability of devices. In addition, uniformity between devices must be considered when they are mass-produced. Therefore, the grain size will become important in determining the performance and reliability. In this study, we use electrical measurements of current–voltage, capacitance–voltage, and polarization–voltage measurements to test high- and low-temperature deposition devices, with a transmission electron microscope (TEM) image to confirm the grain size. Finally, we propose a model to explain the phenomenon and provide a method to obtain better ferroelectric memory.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3093256