Small-Area Perovskite Photodiodes With High Detectivity and Stability

Small-area perovskite photodiodes with an active area of 50\,\,\mu \text{m}\,\,\times 50\,\,\mu \text{m} are achieved, showing both high specific detectivity and excellent stability. The device exhibits a low dark current density of \sim 1.6\times 10 ^{-8} A/cm 2 at a reverse bias of 0.1 V, a pe...

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Bibliographic Details
Published in:IEEE electron device letters 2021-08, Vol.42 (8), p.1200-1203
Main Authors: Zhang, Yang-Yang, Xu, Jian-Long, Zhang, Jing-Yue, Yuan, Yu, Gao, Xu, Wang, Sui-Dong
Format: Article
Language:English
Subjects:
Absorption
Bias
Carrier injection
Dark current
device stability
Electrodes
Indium tin oxide
MA-free perovskite
Minority carriers
Perovskite photodiode
Perovskites
Photodiodes
small area
specific detectivity
Stability criteria
Thermal stability
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Summary:Small-area perovskite photodiodes with an active area of 50\,\,\mu \text{m}\,\,\times 50\,\,\mu \text{m} are achieved, showing both high specific detectivity and excellent stability. The device exhibits a low dark current density of \sim 1.6\times 10 ^{-8} A/cm 2 at a reverse bias of 0.1 V, a peak photoresponsivity of 1.74 A/W, and a peak specific detectivity of 1.5\times 10 ^{13} Jones. Moreover, the device also shows superior photoresponse and thermal stability after continuous 1000 cycles of light switching and 400 h of thermal aging at 85 °C. The high performance is ascribed to the blocking of minority carrier injection from electrodes under a reverse bias and the high crystal quality and thermal stability of the CH 3 NH 3 (MA)-free perovskite photoactive layer.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2021.3093237