Two-Dimensional Excitons in Multiple GaN/AlN Monolayer Quantum Wells

The decay kinetics of low-temperature exciton photoluminescence in a heterostructure with multiple GaN/AlN monolayer quantum wells, which is prepared by molecular beam epitaxy, is studied. Measured radiation decay curves are theoretically simulated within a three-level model. The relaxation of dipol...

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Bibliographic Details
Published in:JETP letters 2021-04, Vol.113 (8), p.504-509
Main Authors: Evropeitsev, E. A., Serov, Yu. M., Nechaev, D. V., Jmerik, V. N., Shubina, T. V., Toropov, A. A.
Format: Article
Language:English
Subjects:
Atomic
Biological and Medical Physics
Biophysics
Brightening
Decay
Dipoles
Excitons
Gallium nitrides
Heterostructures
Low temperature
Molecular
Molecular beam epitaxy
Monolayers
Optical and Plasma Physics
Optics and Laser Physics
Particle and Nuclear Physics
Photoluminescence
Physics
Physics and Astronomy
Quantum Information Technology
Quantum wells
Solid State Physics
Spintronics
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Description
Summary:The decay kinetics of low-temperature exciton photoluminescence in a heterostructure with multiple GaN/AlN monolayer quantum wells, which is prepared by molecular beam epitaxy, is studied. Measured radiation decay curves are theoretically simulated within a three-level model. The relaxation of dipole-allowed “bright” excitons spatially confined in GaN monolayers is determined as exciton relaxation with a characteristic time of ~3 ps, which is accompanied by spin flip and by transformation to dipole-forbidden “dark” excitons whose levels lie by ~60 meV below in energy. It has been shown that exciton states at temperatures above 50 K are two-dimensional.
ISSN:0021-3640
1090-6487
DOI:10.1134/S0021364021080038