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The effect of thermal annealing on Ti/p-Si Schottky diodes
Ti/ p -Si Schottky barrier diodes (SBDs) have been prepared by metal evaporating method. The effect of low annealing temperature on electrical parameters such as series resistance (R s ), ideality factor ( n ) and barrier height ( Φ b ) of Ti/ p -Si Schottky diodes was investigated with the help of...
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| Published in: | Journal of materials science. Materials in electronics 2021-06, Vol.32 (11), p.15343-15351 |
|---|---|
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
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| Summary: | Ti/
p
-Si Schottky barrier diodes (SBDs) have been prepared by metal evaporating method. The effect of low annealing temperature on electrical parameters such as series resistance (R
s
), ideality factor (
n
) and barrier height (
Φ
b
) of Ti/
p
-Si Schottky diodes was investigated with the help of current–voltage (
I–V
) and capacitance–voltage (
C–V
) characteristics. Schottky diodes have been annealed at temperatures from 50 to 200 °C for 1 min in N
2
atmosphere.
Φ
b
,
R
s
and
n
were determined using Cheung and Norde functions in current–voltage characteristics. The Schottky barrier height of the as-deposited contact is found to be 0.747 eV (
I–V
), 1.038 eV (
C–V
), 0.622 eV [H(
I
)
–I
] and 0.786 eV [F(
V
)–
V
] and ideality factor as 1.3 (
I–V
) and 3.55 [
dV/d
(ln
I
)
–I
]. It has been seen that the barrier height, ideality factor and series resistance have changed with increasing annealing temperature up to 200 °C. |
|---|---|
| ISSN: | 0957-4522 1573-482X |
| DOI: | 10.1007/s10854-021-06084-1 |