Effect of strain and stoichiometry on the ferroelectric and pyroelectric properties of the epitaxial Pb(Zr0.2Ti0.8)O3 films deposited on Si wafers

•PZT films on STO/Si substrate are more relaxed than when grown on single crystal STO.•The volume of the unit cell is larger due to different strain conditions during growth.•The domain structure is different, with larger amount of a domains.•Remanent polarization is lower and dielectric constant is...

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Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2021-04, Vol.266, p.115042, Article 115042
Main Authors: Chirila, Cristina, Boni, Georgia Andra, Filip, Lucian Dragos, Husanu, Marius, Neatu, Stefan, Istrate, Cosmin Marian, Rhun, Gwenael Le, Vilquin, Bertrand, Trupina, Lucian, Pasuk, Iuliana, Botea, Mihaela, Pintilie, Ioana, Pintilie, Lucian
Format: Article
Language:English
Subjects:
CMOS
Crystal growth
Electric fields
Electric properties
Epitaxy
Ferroelectric
Ferroelectric materials
Ferroelectricity
Lead zirconate titanates
Oxidation
Perovskites
PLD
PZT
Silicon
Silicon substrates
Single crystals
Stoichiometry
Strontium titanates
Thermal expansion
Thin films
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Summary:•PZT films on STO/Si substrate are more relaxed than when grown on single crystal STO.•The volume of the unit cell is larger due to different strain conditions during growth.•The domain structure is different, with larger amount of a domains.•Remanent polarization is lower and dielectric constant is larger.•XPS results suggest possible presence of anti-site defects. Properties of epitaxial PbZr0.2Ti0.8O3 (PZT) films deposited on Si substrates were investigated for integration in the present CMOS technology. Polarization is downward oriented, in association with the presence of an internal electric field, and has a lower value compared to the PZT films deposited on single crystal perovskite SrTiO3 (STO) substrates (40 µC/cm2 versus 80 µC/cm2), while the dielectric constant is larger (180 versus 120). Large value for the pyroelectric coefficient was also found, 1.22 × 10−3C/m2K, as for PZT grown on single crystal STO. The macroscopic ferroelectric and pyroelectric properties appear to be affected by the structural quality and stoichiometry of the PZT film. The changes in the electric properties are an effect of the strain gradients induced by the large difference between the thermal expansion coefficients of PZT and Si substrate, leading in turn to Pb oxidation and antisite defect formation compared to PZT films deposited on STO substrates.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2021.115042