MOSFET Gate Driver Circuit Design for High Repetitive (200 kHz) High Voltage (10 kV) Solid-State Pulsed-Power Modulator

Solid-state pulsed-power modulators can effectively generate high repetition rate pulses, which are required in applications where the process rate depends on the repetition rate, e.g., plasma source ion implantation and deposition, plasma immersion ion milling, and diamond-like carbon coating. In t...

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Bibliographic Details
Published in:IEEE transactions on power electronics 2021-09, Vol.36 (9), p.10461-10469
Main Authors: Jo, Hyun-Bin, Song, Seung-Ho, Lee, Seung-Hee, Ryoo, Hong-Je
Format: Article
Language:English
Subjects:
Capacitors
Circuit design
Circuit faults
Diamond films
Diamond-like carbon
Diamond-like carbon films
Discharges (electric)
Driver circuits
Field effect transistors
Gate drivers
Gate driving circuit
Gates (circuits)
Ion implantation
Metal oxide semiconductors
Modulation
Modulators
MOSFET
MOSFETs
Pulse duration
pulse power systems
Pulse repetition rate
pulsed-power modulator
Semiconductor devices
Solid state
solid-state Marx modulator
Voltage control
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Summary:Solid-state pulsed-power modulators can effectively generate high repetition rate pulses, which are required in applications where the process rate depends on the repetition rate, e.g., plasma source ion implantation and deposition, plasma immersion ion milling, and diamond-like carbon coating. In this article, a solid-state pulsed-power modulator for generating high repetitive pulses is developed. Active pull-down circuits and designed metal-oxide-semiconductor field-effect transistor (MOSFET) gate drivers are applied to the modulator without increasing its size. The drivers enable a fast rise, fall time, and minimize pulsewidth, which are effective for high-repetition-rate pulse applications. The developed modulator exhibits a maximum output pulse voltage of ±10 kV, maximum output pulse current of 50 A, pulsewidth between 200 ns and 10 u s, maximum pulse repetition rate of 200 kHz, and average output power of 10 kW. The operation principle of the designed MOSFET gate driver is analyzed in detail. Experimental results show that the modulator operates stably at a high repetition rate of 10 kV and 200 kHz and the feasibility of this proposed circuit for high repetition rate operation are verified.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2021.3062612