Growth Parameter Based Control of Cation Disorder in MgSnN2 Thin Films

MgSnN 2 thin films have been grown on yttria-stabilized zirconia substrates via plasma-assisted molecular beam epitaxy and analyzed using reflection high-energy electron diffraction, X-ray diffraction, optical transmission, and cathodoluminescence. By systematically varying the growth parameters, pa...

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Bibliographic Details
Published in:Journal of electronic materials 2021-06, Vol.50 (6), p.2949-2955
Main Authors: York, Krystal R., Makin, Robert A., Senabulya, Nancy, Mathis, James P., Clarke, Roy, Reeves, Roger J., Durbin, Steven M.
Format: Article
Language:English
Subjects:
62nd Electronic Materials Conference 2020
Cathodoluminescence
Cations
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electron diffraction
Electronics and Microelectronics
Epitaxial growth
Flow velocity
High energy electrons
Instrumentation
Materials Science
Molecular beam epitaxy
Optical and Electronic Materials
Parameters
Solid State Physics
Substrates
Thin films
Topical Collection: 62nd Electronic Materials Conference 2020
X ray reflection
Yttria-stabilized zirconia
Yttrium oxide
Zirconium dioxide
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Summary:MgSnN 2 thin films have been grown on yttria-stabilized zirconia substrates via plasma-assisted molecular beam epitaxy and analyzed using reflection high-energy electron diffraction, X-ray diffraction, optical transmission, and cathodoluminescence. By systematically varying the growth parameters, particularly the substrate temperature, Mg:Sn flux ratio, substrate, and nitrogen flow rate, we were able to achieve high quality films and control disorder in the cation sublattice. This control of disorder allows for the ability to adjust the band gap continuously over a wide range of values.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-020-08708-4