CuSbS2 Solar Cells Using CdS, In2S3 and the In/Cd-based Hybrid Buffers

CuSbS 2 , a ternary I–V–VI 2 chalcogenide material, has recently drawn great attention for use as a promising light absorber for photovoltaics. However, the low open circuit voltage ( V OC ) remains as a bottleneck for CuSbS 2 solar cells which is the limitation of its power conversion efficiency. T...

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Bibliographic Details
Published in:Journal of electronic materials 2021-06, Vol.50 (6), p.3283-3287
Main Authors: Wang, Li, Zhao, Xiangyun, Yang, Zhen, Ng, Boon K., Jiang, Liangxing, Lai, Yanqing, Jia, Ming
Format: Article
Language:English
Subjects:
Buffer layers
Characterization and Evaluation of Materials
Chemistry and Materials Science
Circuits
Current density
Electronics and Microelectronics
Energy conversion efficiency
Instrumentation
Materials Science
Open circuit voltage
Optical and Electronic Materials
Original Research Article
Photovoltaic cells
Short circuit currents
Shunt resistance
Solar cells
Solid State Physics
Spectral sensitivity
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Summary:CuSbS 2 , a ternary I–V–VI 2 chalcogenide material, has recently drawn great attention for use as a promising light absorber for photovoltaics. However, the low open circuit voltage ( V OC ) remains as a bottleneck for CuSbS 2 solar cells which is the limitation of its power conversion efficiency. This could be caused by the severe recombination losses at the interface between CuSbS 2 and CdS buffer layers. This work aims to explore the effect of CdS, In 2 S 3 , and the In/Cd-based hybrid buffer layers on the device performance of CuSbS 2 solar cells. Device parameters, such as current density-voltage ( J–V ) and spectral response, were measured and compared, band alignment was extrapolated for CuSbS 2 with different buffer materials. With the highest measured V OC and short circuit current density ( J sc ), reduced series resistance ( R s ) and improved shunt resistances leading to the highest fill factor (FF), it has been concluded that the CuSbS 2 device with combined CdS/In 2 S 3 buffer layers exhibits the best performance compared to those with other buffer layers.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-021-08815-w