Loading…

A Self-Adaptive Measurement System for IGBT Collector Current Using Package Parasitics

Insulated gate bipolar transistor (IGBT) collector current measurement based on the package parasitics between the power emitter ( E ) and the Kelvin emitter ( E′ ) is a lossless and real-time monitoring method. A step to improve accuracy is to precisely match the time constant ( R f × C f ) of the...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on industrial electronics (1982) 2021-08, Vol.68 (8), p.7545-7555
Main Authors: Zhu, Hongyue, Cheng, Xinhong, Ng, Wai Tung, Xu, Dawei, Li, Xinchang, Xia, Yifei
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Insulated gate bipolar transistor (IGBT) collector current measurement based on the package parasitics between the power emitter ( E ) and the Kelvin emitter ( E′ ) is a lossless and real-time monitoring method. A step to improve accuracy is to precisely match the time constant ( R f × C f ) of the measurement circuit against the package parasitics ( L EE′ / R EE′ ). This article proposes an automated time constant matching method to realize the tuning of R f × C f to L EE′ / R EE′ , and a detection circuit to continuously measure the IGBT collector current using the package parasitics. In the proposed method, the Miller plateau voltage is first sampled, and a polynomial curve fit is carried out to determine the fitting parameters associated with the IGBT collector current ( I C ). A programmable resistor R f is then adjusted automatically based on the step response of the readout voltage until the time constant is matched. A ratio between the readout voltage and a known I C is then calculated based on the Miller plateau voltage. The proposed system is verified using a field-programmable gate array controller and discrete components. Experimental results confirmed the functionality of the proposed method, showing that the readout voltage versus I C relationship has good agreement in the range of 0-165 A, with less than 3% error. The proposed method can also be used for overcurrent protection with a detection time of less than 0.7 μ s.
ISSN:0278-0046
1557-9948
DOI:10.1109/TIE.2020.3001853