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Structure and physical properties of hydrogenated (Co + Al)-doped ZnO films: Comparative study with co-doped ZnO films

[Display omitted] •(Co + Al)-doped ZnO films were synthesized by RF magnetron sputtering in atmosphere Ar + H2.•Zn/Co ratio in the films was found to be several times lower than in the target used.•Conditions for the formation of gaseous ZnH2 during films deposition are considered.•Secondary phases...

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Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2021-02, Vol.264, p.114943, Article 114943
Main Authors: Samoshkina, Yulia E., Edelman, Irina S., Chou, Hsiung, Lin, Hsien-Chi, Dwivedi, Gopeshwar D., Petrov, Dmitry A., Zharkov, Sergey M., Zeer, Galina M., Molokeev, Maxim S.
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Language:English
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Summary:[Display omitted] •(Co + Al)-doped ZnO films were synthesized by RF magnetron sputtering in atmosphere Ar + H2.•Zn/Co ratio in the films was found to be several times lower than in the target used.•Conditions for the formation of gaseous ZnH2 during films deposition are considered.•Secondary phases related to Co and Al were not detected by XRD.•Films exhibit ferromagnetic almost hysteresis-free behavior at room temperature. (Co + Al)-doped ZnO films have been synthesized by the RF magnetron sputtering. Films of this composition have first been obtained in mixed atmosphere of Ar + H2. High hydrogen concentration of 20–50% has been used together with high enough substrate temperature of 450 °C. The used technological conditions affected the morphology, chemical composition, optical, electric, and magnetic properties of the films to an even more than in the case of Co-doped ZnO films synthesized under the same conditions and studied earlier. The films exhibit ferromagnetic behavior at room temperature with much greater magnetization and magneto-optical activity compared to the Co-doped films. At the same time, the hydrogenated films show an increase in electric conductivity in comparison with samples synthesized in the atmosphere of Ar + O2. The magnetic nature of the hydrogenated films has been associated with the defect-related mechanism.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2020.114943