On improving the radiation resistance of gallium oxide for space applications

A method is proposed for increasing the radiation resistance of semiconductor crystals (AlxGa1-x)2O3, which are promising for creating power electronics and optoelectronic devices for spacecraft performing tasks in near-earth orbits. The effect of the aluminum content on the bandgap in (AlxGa1-x)2O3...

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Bibliographic Details
Published in:Acta astronautica 2021-03, Vol.180, p.125-129
Main Authors: Bauman, D.A., Borodkin, A.I., Petrenko, A.A., Panov, D.I., Kremleva, A.V., Spiridonov, V.A., Zakgeim, D.A., Silnikov, M.V., Odnoblyudov, M.A., Romanov, A.E., Bougrov, V.E.
Format: Article
Language:English
Subjects:
Aluminum
Aluminum content
Crystal growth
Crystals
Czochralski method
Electronic devices
Energy gap
Gallium
Gallium oxide
Gallium oxides
Optoelectronic devices
Radiation
Radiation resistance
Radiation tolerance
Semiconductor crystals
Single crystals
Space applications
Spacecraft
Spectroscopy
Spectrum analysis
X-ray spectroscopy
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Summary:A method is proposed for increasing the radiation resistance of semiconductor crystals (AlxGa1-x)2O3, which are promising for creating power electronics and optoelectronic devices for spacecraft performing tasks in near-earth orbits. The effect of the aluminum content on the bandgap in (AlxGa1-x)2O3 single crystals grown from a melt by the Czochralski method is investigated. The necessary conditions for the formation of a high-quality seed and subsequent growth of single crystals are achieved by setting temperature gradients at each successive stage of growth. The results of energy-dispersive X-ray spectroscopy analysis and optical transmission spectra of (AlxGa1-x)2O3 crystals with an aluminum content from 0 to 7.32% are presented. It is shown that an increase in the aluminum content leads to a monotonic increase in the bandgap from 4.7 eV to 5.0 eV, which provides an increase in radiation resistance. •Aluminum content increase leads to the bandgap enlargement of (AlxGa1-x)2O3 crystals.•Bandgap enlargement of the semiconductor material enhances radiation resistance of the one.•Radiation robust wide-bandgap semiconductor materials can be utilized for space applications.•Czochralski method grown bulk (AlxGa1-x)2O3 crystals purity depends on temperature gradients at each successive growth stage.
ISSN:0094-5765
1879-2030
DOI:10.1016/j.actaastro.2020.12.010