Stress-controlled zero-field spin splitting in silicon carbide

We report the influence of static mechanical deformation on the zero-field spin splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerfa...

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Published in:Applied physics letters 2021-02, Vol.118 (8)
Main Authors: Breev, I. D., Poshakinskiy, A. V., Yakovleva, V. V., Nagalyuk, S. S., Mokhov, E. N., Hübner, R., Astakhov, G. V., Baranov, P. G., Anisimov, A. N.
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Language:English
Subjects:
Applied physics
Deformation
Heterostructures
Magnetic resonance
Piezoelectricity
Raman spectroscopy
Room temperature
Silicon carbide
Spin transition
Splitting
Strain
Stress concentration
Stress distribution
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cited_by cdi_FETCH-LOGICAL-c393t-19574620d1c4b24effc5c128eadab35fcd6083bbccbc7b90d3b291ab98d95cdb3
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container_issue 8
container_start_page
container_title Applied physics letters
container_volume 118
creator Breev, I. D.
Poshakinskiy, A. V.
Yakovleva, V. V.
Nagalyuk, S. S.
Mokhov, E. N.
Hübner, R.
Astakhov, G. V.
Baranov, P. G.
Anisimov, A. N.
description We report the influence of static mechanical deformation on the zero-field spin splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially resolved confocal Raman spectroscopy. The zero-field spin splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically detected magnetic resonance, reveals significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which is 0.75 GHz/strain for the V1/V3 centers and 0.5 GHz/strain for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize fine tuning of spin transition energies in SiC by deformation.
doi_str_mv 10.1063/5.0040936
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source American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects Applied physics
Deformation
Heterostructures
Magnetic resonance
Piezoelectricity
Raman spectroscopy
Room temperature
Silicon carbide
Spin transition
Splitting
Strain
Stress concentration
Stress distribution
title Stress-controlled zero-field spin splitting in silicon carbide
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