Stress-controlled zero-field spin splitting in silicon carbide

We report the influence of static mechanical deformation on the zero-field spin splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerfa...

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Bibliographic Details
Published in:Applied physics letters 2021-02, Vol.118 (8)
Main Authors: Breev, I. D., Poshakinskiy, A. V., Yakovleva, V. V., Nagalyuk, S. S., Mokhov, E. N., Hübner, R., Astakhov, G. V., Baranov, P. G., Anisimov, A. N.
Format: Article
Language:English
Subjects:
Applied physics
Deformation
Heterostructures
Magnetic resonance
Piezoelectricity
Raman spectroscopy
Room temperature
Silicon carbide
Spin transition
Splitting
Strain
Stress concentration
Stress distribution
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Summary:We report the influence of static mechanical deformation on the zero-field spin splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures deformed by growth conditions and monitor the stress distribution as a function of distance from the heterointerface with spatially resolved confocal Raman spectroscopy. The zero-field spin splitting of the V1/V3 and V2 centers in 6H-SiC, measured by optically detected magnetic resonance, reveals significant changes at the heterointerface compared to the bulk value. This approach allows unambiguous determination of the spin-deformation interaction constant, which is 0.75 GHz/strain for the V1/V3 centers and 0.5 GHz/strain for the V2 centers. Provided piezoelectricity of AlN, our results offer a strategy to realize fine tuning of spin transition energies in SiC by deformation.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0040936