Large area chemical vapour deposition grown transition metal dichalcogenide monolayers automatically characterized through photoluminescence imaging

Chemical vapour deposition (CVD) growth is capable of producing multiple single-crystal islands of atomically thin transition metal dichalcogenides (TMDs) over large areas. Subsequent merging of perfectly epitaxial domains can lead to single-crystal monolayer sheets, a step towards scalable producti...

Full description

Saved in:
Bibliographic Details
Published in:NPJ 2D materials and applications 2020-05, Vol.4 (1), Article 12
Main Authors: Severs Millard Toby, Genco Armando, Alexeev, Evgeny M, Randerson, Sam, Ahn Seongjoon, A-Rang, Jang, Suk Shin Hyeon, Tartakovskii, Alexander I
Format: Article
Language:English
Subjects:
Chalcogenides
Chemical vapor deposition
Computer vision
Domains
Epitaxial growth
Homogeneity
Islands
Molybdenum compounds
Monolayers
Optical microscopy
Photoluminescence
Quality assessment
Sapphire
Sheets
Silicon dioxide
Single crystals
Substrates
Transition metal compounds
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Chemical vapour deposition (CVD) growth is capable of producing multiple single-crystal islands of atomically thin transition metal dichalcogenides (TMDs) over large areas. Subsequent merging of perfectly epitaxial domains can lead to single-crystal monolayer sheets, a step towards scalable production of high quality TMDs. For CVD growth to be effectively harnessed for such production it is necessary to be able to rapidly assess the quality of material across entire large area substrates. To date, characterisation has been limited to sub-0.1-mm2 areas, where the properties measured are not necessarily representative of an entire sample. Here, we apply photoluminescence (PL) imaging and computer vision techniques to create an automated analysis for large area samples of monolayer TMDs, measuring the properties of island size, density of islands, relative PL intensity and homogeneity, and orientation of triangular domains. The analysis is applied to ×20 magnification optical microscopy images that completely map samples of WSe2 on hBN, 5.0 mm × 5.0 mm in size, and MoSe2–WS2 on SiO2/Si, 11.2 mm × 5.8 mm in size. Two prevailing orientations of epitaxial growth were observed in WSe2 grown on hBN and four predominant orientations were observed in MoSe2, initially grown on c-plane sapphire. The proposed analysis will greatly reduce the time needed to study freshly synthesised material over large area substrates and provide feedback to optimise growth conditions, advancing techniques to produce high quality TMD monolayer sheets for commercial applications.
ISSN:2397-7132
2397-7132
DOI:10.1038/s41699-020-0146-y