Experimental combined theoretical study on chemical interactions of graphene oxide with chitosan and its resistive-switching effect

[Display omitted] •Hybrid CS-GO based RRAM exhibits bipolar resistive switching with the endurance of ~103 and the On/Off ratio of ~102.•Interactions between CS and GO through chemical peptide and hydrogen bonds.•Unoccupied levels in both isolated state and hybrid CS-GO system as trap sites for resi...

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Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2020-12, Vol.262, p.114788, Article 114788
Main Authors: My Tran, Kim, Phuc Do, Dinh, Nam Vu, Hoang, Nguyen, Toan T, Thang Phan, Bach, Hanh Ta Thi, Kieu, Ngoc Pham, Kim
Format: Article
Language:English
Subjects:
Chitosan
Density functional theory
Electric fields
Electron traps
Environmental studies
Graphene
Graphene oxide
Hydrogen bonds
Mathematical analysis
Memory devices
Molecular orbitals
Nanocomposites
Resistive switching
Switching
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Summary:[Display omitted] •Hybrid CS-GO based RRAM exhibits bipolar resistive switching with the endurance of ~103 and the On/Off ratio of ~102.•Interactions between CS and GO through chemical peptide and hydrogen bonds.•Unoccupied levels in both isolated state and hybrid CS-GO system as trap sites for resistive switching mechanism. Recently, nanocomposite materials that consist of chitosan (CS) and graphene oxide (GO) have received immense attention in many fields of research, such as biomedicine, environmental studies, energy and electronics. In this paper, we study resistive memory devices in capacitor-like Ag/CS-GO/FTO structures, with the CS-GO nanocomposites acting as the memory layer. The devices showed a bipolar resistive-switching effect under an external electric field, with the endurance of 103 and ON/OFF ratio around 102. The calculated results confirmed by using density-function-theory (DFT) calculations show the stability of CS-GO nanocomposites through the presence of peptide and hydrogen bonds. Moreover, the calculated HOMO–LUMO gap (HLG) of GO is within the HLG of CS, so several unoccupied levels of GO can serve as electron traps in CS-GO nanocomposites. Based on these results above, a resistive-switching mechanism in Ag/CS-GO/FTO devices can be proposed because of the trap/de-trap process of injected electrons under external electric field.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2020.114788