EXTENDED DEFECTS IN GaAs/Ge/GaAs HETEROSTRUCTURES WITH TURNING GaAs LAYERS

The GaAs layer turn on Ge at a right angle in the substrate plane was studied by high-energy electron diffraction and transmission electron microscopy methods when growing GaAs/Ge/GaAs heterostructures using individual molecular-beam epitaxy systems for GaAs and Ge, with sample transfer through atmo...

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Bibliographic Details
Published in:Bulletin of the Lebedev Physics Institute 2020-12, Vol.47 (12), p.365-370
Main Authors: Kazakov, I. P., Zinov’ev, S. A., Klekovkin, A. V., Sazonov, V. A., Kukin, V. N., Borgardt, N. I.
Format: Article
Language:English
Subjects:
Electron diffraction
Electrons
Epitaxial growth
Gallium arsenide
Heterostructures
High energy electrons
Molecular beam epitaxy
Physics
Physics and Astronomy
Substrates
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Summary:The GaAs layer turn on Ge at a right angle in the substrate plane was studied by high-energy electron diffraction and transmission electron microscopy methods when growing GaAs/Ge/GaAs heterostructures using individual molecular-beam epitaxy systems for GaAs and Ge, with sample transfer through atmosphere.
ISSN:1068-3356
1934-838X
DOI:10.3103/S106833562012012X