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Effects of Y Doping on Dielectric and Varistor Properties of CaCu3Ti4O12 Thin Films
Ca 1−3 x /2 Y x Cu 3 Ti 4 O 12 ( x = 0, 0.05, 0.1, 0.15, and 0.2) (CCTO) thin films were prepared by a modified sol–gel method. The effects of Y doping on the microstructure and electrical properties of the CCTO thin films were investigated. According to x-ray diffraction analysis, the main phase o...
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Published in: | Journal of electronic materials 2020-12, Vol.49 (12), p.7379-7385 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Ca
1−3
x
/2
Y
x
Cu
3
Ti
4
O
12
(
x
= 0, 0.05, 0.1, 0.15, and 0.2) (CCTO) thin films were prepared by a modified sol–gel method. The effects of Y doping on the microstructure and electrical properties of the CCTO thin films were investigated. According to x-ray diffraction analysis, the main phase of all Y-doped CCTO thin films is cubic Im
3
¯
. Meanwhile, some secondary phases were defected. Scanning electron microscopy analysis showed that Y doping can easily lead to a smaller grain size and larger porosity in CCTO thin films. Room-temperature dielectric analysis showed that the dielectric constant of different Y doping samples at 1 kHz was 4213, 4523, 4974, 4824, and 4777, and the dielectric losses were 0.053, 0.051, 0.062, 0.067, and 0.049, respectively. The study of Y-doped CCTO thin films showed that Y doping increased the dielectric constant of the films at low frequencies, but at the same time it increased their dielectric loss and decreased their dielectric frequency and temperature stability range. Y-doping had little effect on the nonlinearity of the films and did not significantly change their nonlinear coefficients. |
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ISSN: | 0361-5235 1543-186X |
DOI: | 10.1007/s11664-020-08515-x |