Room temperature photon induced electrical tuning of intersubband transition in GaN HEMT for terahertz applications

A new and versatile mechanism for electrical tuning of intersubband transitions (ISBT) in GaN High Electron Mobility Transistor (HEMT) device at room temperature is presented. In present study, experimental demonstration is provided which clearly discriminate ISBT from any other transitions induced...

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Bibliographic Details
Published in:Microelectronic engineering 2020-09, Vol.233, p.111433, Article 111433
Main Authors: Kaneriya, R.K., Rastogi, Gunjan, Basu, P.K., Upadhyay, R.B., Bhattacharya, A.N.
Format: Article
Language:English
Subjects:
Atoms & subatomic particles
Conduction bands
Cryogenic temperature
Electron gas
Electron mobility
GaN HEMT
Intersubband transition
Intersubband transitions
Lattice vibration
Quantum wells
Room temperature
Strong interactions (field theory)
Studies
Temperature effects
Terahertz device
Transistors
Tuning
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Summary:A new and versatile mechanism for electrical tuning of intersubband transitions (ISBT) in GaN High Electron Mobility Transistor (HEMT) device at room temperature is presented. In present study, experimental demonstration is provided which clearly discriminate ISBT from any other transitions induced by deep level traps, defects, etc. in 100 nm GaN HEMT device at room temperature. The strong interaction of light with two-dimensional electron gas (2DEG) inside asymmetrical triangular quantum well of GaN HEMT is investigated. The resultant ISBT of the carriers can be explained through pinning of the fermi level inside the quantum well by applying an electrical field along growth direction through gate. Presently intersubband (ISB) based devices are operated at cryogenic temperature to minimize the thermal lattice vibration. The inherent advantage of conduction band tuning through external bias in HEMT structure as demonstrated in this works can leads to room temperature device operation feasibility. [Display omitted] •Experimentally RT intersubband resonance phenomena explored for GaN HEMT device.•Discriminate ISBT from traps assisted transition and plasma wave THz FET response.•GaN HEMT can be exploit potential tunable source and detector for THz.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2020.111433