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A CMOS Low Power Current Source Tunable Inductor With 80% Tuning Range for RFIC
This article describes a novel Low Power Current Source Tunable Inductor (LPCSTI) for CMOS Radio Frequency Integrated Circuits (RFIC). The LPCSTI comprises a deep triode common source transistor, a stabilizer resistor and a coupling capacitor which is capable to increase the physical inductance valu...
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Published in: | IEEE journal of the Electron Devices Society 2020, Vol.8, p.1210-1218 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | This article describes a novel Low Power Current Source Tunable Inductor (LPCSTI) for CMOS Radio Frequency Integrated Circuits (RFIC). The LPCSTI comprises a deep triode common source transistor, a stabilizer resistor and a coupling capacitor which is capable to increase the physical inductance value up to 80% from its default value thus achieving higher inductance per area. Integration of the tuner to a physical inductor of 1.2 nH increases the inductance value up to 2.2 nH at 2.5 GHz, contributing to an area reduction of 52%. The LPCSTI is implemented in a single stage CMOS 180 nm power amplifier (PA) and tested. The tunability property of the LPCSTI allows the performance of the LPCSTI-PA to be adjusted and makes it resilient to process variations, thus enhances production yield. The LPCSTI-PA achieved a maximum output power of 15 dBm as well as peak efficiency of 45%. Measurement on 10 sample dice show that the efficiency of the LPCSTI-PA can be maintained to be more than 20% at maximum linear output power. |
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ISSN: | 2168-6734 2168-6734 |
DOI: | 10.1109/JEDS.2020.3023132 |