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A CMOS Low Power Current Source Tunable Inductor With 80% Tuning Range for RFIC

This article describes a novel Low Power Current Source Tunable Inductor (LPCSTI) for CMOS Radio Frequency Integrated Circuits (RFIC). The LPCSTI comprises a deep triode common source transistor, a stabilizer resistor and a coupling capacitor which is capable to increase the physical inductance valu...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2020, Vol.8, p.1210-1218
Main Authors: Mariappan, Selvakumar, Rajendran, Jagadheswaran, Ibrahim, Shahrolhafiz S., Hamid, Sofiyah S., Yusof, Yusman M., Noh, Norlaili M., Rustagi, Subhash C., Kantimahanti, Arjun K.
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Language:English
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Summary:This article describes a novel Low Power Current Source Tunable Inductor (LPCSTI) for CMOS Radio Frequency Integrated Circuits (RFIC). The LPCSTI comprises a deep triode common source transistor, a stabilizer resistor and a coupling capacitor which is capable to increase the physical inductance value up to 80% from its default value thus achieving higher inductance per area. Integration of the tuner to a physical inductor of 1.2 nH increases the inductance value up to 2.2 nH at 2.5 GHz, contributing to an area reduction of 52%. The LPCSTI is implemented in a single stage CMOS 180 nm power amplifier (PA) and tested. The tunability property of the LPCSTI allows the performance of the LPCSTI-PA to be adjusted and makes it resilient to process variations, thus enhances production yield. The LPCSTI-PA achieved a maximum output power of 15 dBm as well as peak efficiency of 45%. Measurement on 10 sample dice show that the efficiency of the LPCSTI-PA can be maintained to be more than 20% at maximum linear output power.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2020.3023132