Distributed Small-Signal Equivalent Circuit Model and Parameter Extraction for SiGe HBT

In this paper, we present an improved high frequency small-signal distributed model for SiGe HBTs under forward-active mode based on the transmission line theory. The distributed nature of the transistor structure is taken into account in the proposed model. The single SiGe HBT is considered to be a...

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Bibliographic Details
Published in:IEEE access 2019, Vol.7, p.5865-5873
Main Authors: Sun, Yabin, Liu, Ziyu, Li, Xiaojin, Shi, Yanling
Format: Article
Language:English
Subjects:
Admittance
Device modeling
Electrical impedance
Equivalent circuits
High frequency
Mathematical model
Mathematical models
Parameter extraction
Parameters
rational function fitting
Rational functions
Resistance
Semiconductor devices
SiGe HBT
Silicon germanides
Silicon germanium
small-signal model
Transistors
transmission line
Transmission lines
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Summary:In this paper, we present an improved high frequency small-signal distributed model for SiGe HBTs under forward-active mode based on the transmission line theory. The distributed nature of the transistor structure is taken into account in the proposed model. The single SiGe HBT is considered to be a cascade of many infinitesimal transistors, connected with the intrinsic base resistance. The closed-form solutions of admittance parameters for the distributed model are derived by solving the transmission line equation. With reasonable approximation and simplification, the model parameters are then directly extracted based on the nonlinear rational function fitting. The new improved distributed model and parameter extraction technique are validated with a 1\times 1.2\times 30\,\,\mu \text{m}^{2} SiGe HBT from 100 MHz to 20.89 GHz. The simulated S -parameters in the proposed transmission line model are in close agreement with the measured data, and the frequency characteristics of the transistors are well predicted.
ISSN:2169-3536
2169-3536
DOI:10.1109/ACCESS.2018.2879972