High performance ammonia gas sensor based on GaN honeycomb nanonetwork

[Display omitted] •First employment of the GaN honeycomb nanonetwork for NH3 sensors.•First employment of Pt nanonetwork as the catalyst for NH3 gas dissociation.•Investigation of the absorption activation energy Ea of NH3 sensors.•Fast response of 23 s and small LOD of 0.31 ppm. In this work, we ha...

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Published in:Sensors and actuators. A. Physical. 2020-09, Vol.312, p.112172, Article 112172
Main Authors: Shen, Bowei, Li, Fu, Xie, Yizhu, Luo, Jingting, Fan, Ping, Zhong, Aihua
Format: Article
Language:English
Subjects:
Absorption activation energy
Ammonia
Contact resistance
Electric contacts
Field effect transistor
Finite element analysis
GaN honeycomb nanonetwork
Gas detectors
Gas sensors
LOD
Multilayers
NH3 gas sensor
Operating temperature
Photolithography
Recovery time
Selectivity
Sensors
Temperature
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Summary:[Display omitted] •First employment of the GaN honeycomb nanonetwork for NH3 sensors.•First employment of Pt nanonetwork as the catalyst for NH3 gas dissociation.•Investigation of the absorption activation energy Ea of NH3 sensors.•Fast response of 23 s and small LOD of 0.31 ppm. In this work, we have demonstrated a FET-like ammonia (NH3) gas sensor fabricated on a unique structure namely GaN honeycomb nanonetwork (GaN-HN) which is in-plane electrically conductive together with large surface-to-volume ratio. Utilizing ohmic contact Ti/Al/Ti/Au multilayers as the source and the drain terminals and Pt nanonetwork layer as the gate terminal, the FET-like NH3 gas sensors were fabricated by a two-mask photolithography process. The fabricated NH3 gas sensors have high selectivity, fast response/recovery, and a wide detection range up to 5000 ppm. The response and recovery time for 5 ppm NH3 gas are 23 s and 101 s at a moderate operating temperature of 120 °C. Interestingly, this sensor is capable to detect trace NH3 gas and the low limit of detection (LOD) is as small as 0.31 ppm. Its absorption activation energy Ea is also investigated by the transient-state study.
ISSN:0924-4247
1873-3069
DOI:10.1016/j.sna.2020.112172