Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

The characteristics of metal-insulator-semiconductor (MIS) structures based on insulating PbSnTe:In films with compositions in the vicinity of band inversion grown by molecular-beam epitaxy (MBE) are studied. It is shown that a number of features of the films can be due to a ferroelectric phase tran...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020-10, Vol.54 (10), p.1325-1331
Main Authors: Klimov, A. E., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Gorshkov, D. V., Ishchenko, D. V., Matyushenko, E. V., Neizvestny, I. G., Sidorov, G. Yu, Suprun, S. P., Tarasov, A. S., Tereshchenko, O. E., Epov, V.S.
Format: Article
Language:English
Subjects:
2020
Composition
Curie temperature
Epitaxial growth
Ferroelectric materials
Ferroelectricity
Insulators
Magnetic Materials
Magnetism
March 10–13
MIS (semiconductors)
Molecular beam epitaxy
Nizhny Novgorod
Phase transitions
Physics
Physics and Astronomy
Radiation, Background
Semiconductors
Xxiv International Symposium “Nanophysics and Nanoelectronics”
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Summary:The characteristics of metal-insulator-semiconductor (MIS) structures based on insulating PbSnTe:In films with compositions in the vicinity of band inversion grown by molecular-beam epitaxy (MBE) are studied. It is shown that a number of features of the films can be due to a ferroelectric phase transition with a Curie temperature in the range of about T ≈ 15–20 K.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620100164