Dresselhaus spin-orbit coupling induced electron-spin polarization in a 3-layered semiconductor heterostructure

•Spin transport is studied in a 3-layered semiconductor heterostructure.•An obvious spin polarization appears due to Dresselhaus SOC.•Spin polarization is modulated by strain engineering or intermediate layer.•The 3-layered semiconductor heterostructure can be used as a controllable spin filter. Con...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2020-11, Vol.513, p.167217, Article 167217
Main Authors: Cao, Zeng-Lin, Lu, Mao-Wang, Huang, Xin-Hong, Guo, Qing-Meng, Yang, Shuai-Quan
Format: Article
Language:English
Subjects:
Controllable spin filter
Dresselhaus-type SOC
Electron spin
Electrons
Heterostructures
Layered semiconductor heterostructure
Plane waves
Polarization (spin alignment)
Schrodinger equation
Spin polarization
Spin-orbit interactions
Spintronics
Transfer matrices
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Summary:•Spin transport is studied in a 3-layered semiconductor heterostructure.•An obvious spin polarization appears due to Dresselhaus SOC.•Spin polarization is modulated by strain engineering or intermediate layer.•The 3-layered semiconductor heterostructure can be used as a controllable spin filter. Considering Dresselhaus-type spin–orbit coupling (SOC), we theoretically investigate spin-polarized transport in a 3-layered semiconductor heterostructure, InSb/InxGa1-xAs/GaSb. Adopting improved transfer matrix method to solve Schrödinger equation, electronic transmission coefficient is obtained exactly, and then spin polarization ratio is evaluated. An appreciable electron-spin polarization effect by the Dresselhaus-SOC appears in this layered semiconductor heterostructure. Spin polarization is associated closely with in-plane wave vector, incident direction and SOC strength. In particular, both magnitude and sign of spin polarization are manipulated by strain engineering or an appropriate intermediate-layer. Therefore, such a 3-layered semiconductor heterostructure can serve as a controllable spin filter for spintronics device applications.
ISSN:0304-8853
1873-4766
DOI:10.1016/j.jmmm.2020.167217