Efficient Sb2Se3/CdS planar heterojunction solar cells in substrate configuration with (hk0) oriented Sb2Se3 thin films

Antimony selenide (Sb2Se3) based solar cell technology has experienced rapid development with demonstrated cell efficiency reaching ̴ 9.2% for devices in substrate configuration, hence motivating more intense research investigations. Though the effect of crystallographic orientation in this non-cubi...

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Bibliographic Details
Published in:Solar energy materials and solar cells 2020-09, Vol.215, p.110603, Article 110603
Main Authors: Tiwari, Kunal J., Neuschitzer, Markus, Espíndola-Rodriguez, Moises, Sánchez, Yudania, Jehl, Zacharie, Vidal-Fuentes, Pedro, Saucedo, Edgardo, Malar, Piraviperumal
Format: Article
Language:English
Subjects:
(hk0) orientation
Absorbers
Annealing
Antimony
Antimony compounds
Antimony selenide
Antisite defects
Cadmium sulfide
Chemical composition
Configurations
Crystal defects
Crystallography
E-beam evaporation
Efficiency
Electron beams
Energy conversion efficiency
Evaporation
Fabrication
Heat treatment
Heterojunctions
Orientation effects
Photovoltaic cells
Selenide
Selenides
Selenium
Solar cells
Stoichiometry
Substrate configuration
Substrates
Thin film solar cells
Thin films
Zinc oxide
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Summary:Antimony selenide (Sb2Se3) based solar cell technology has experienced rapid development with demonstrated cell efficiency reaching ̴ 9.2% for devices in substrate configuration, hence motivating more intense research investigations. Though the effect of crystallographic orientation in this non-cubic material on device performance is now well understood, the influence of composition and intrinsic defects remains debatable. In this work we describe the fabrication and device characteristics of Sb2Se3 solar cells designed in the substrate configuration (SLG/Mo/Sb2Se3/CdS/i-ZnO/ITO). Notably, Sb2Se3 absorber layers with a predominant (hk0) orientation were deposited in a single step by e-beam evaporation of pre synthesized bulk source material. As grown precursor Sb2Se3 thin films were subjected to reactive thermal annealing treatment in the presence of Se source at different temperatures for enhancing their crystalline quality and balancing their stoichiometry. Analysis of the completed solar cells indicated improved efficiencies post reactive thermal annealing process, with the best performing devices exhibiting a power conversion efficiency (η) of ~4.34% for an absorber annealed at a temperature of 350 °C. The improved efficiency is ascribed to the observed changes in chemical composition of the absorber layer and the possible formation of related beneficial antisite defects. •(120) oriented polycrystalline Sb2Se3 thin films were deposited by e-beam evaporation of pre synthesized bulk in single step.•Stoichiometry and concentration of native defects was modified through reactive thermal annealing (RTA) of as grown absorber layers under Se atmosphere.•Sb2Se3 heterojunction solar cells were completed in the substrate configuration of Mo/Sb2Se3/CdS/i-ZnO/ITO.•Best performing solar cells exhibited power conversion efficiency ~4.34% for the absorber layers annealed at temperature of 350 °C.•Improvement in the efficiency was attributed to the passivation of native defects resulting from the ReTA of as grown Sb2Se3 thin films.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2020.110603