Quantum Coherence and the Kondo Effect in the 2D Electron Gas of Magnetically Undoped AlGaN/GaN High-Electron-Mobility Transistor Heterostructures

The unusual observation of the Kondo effect in the two-dimensional electron gas (2DEG) of magnetically undoped AlGaN/GaN heterostructures is reported. The temperature-dependent zero-field resistivity data exhibits an upturn below 120 K, while the standard low-temperature weak localization and then w...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020-09, Vol.54 (9), p.1150-1154
Main Authors: Chumakov, N. K., Chernykh, I. A., Davydov, A. B., Ezubchenko, I. S., Grishchenko, Yu. V., Lev, L. L., Maiboroda, I. O., Morgun, L. A., Strocov, V. N., Valeyev, V. G., Zanaveskin, M. L.
Format: Article
Language:English
Subjects:
2020
Aluminum gallium nitrides
Analysis
Coherence
Electron gas
Electrons
Gallium nitrides
Heterostructures
High electron mobility transistors
Kondo effect
Low temperature
Magnetic fields
Magnetic Materials
Magnetism
March 10–13
Nizhny Novgorod
Physics
Physics and Astronomy
Quantum phenomena
Spin-orbit interactions
Temperature dependence
Xxiv International Symposium “Nanophysics and Nanoelectronics”
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Summary:The unusual observation of the Kondo effect in the two-dimensional electron gas (2DEG) of magnetically undoped AlGaN/GaN heterostructures is reported. The temperature-dependent zero-field resistivity data exhibits an upturn below 120 K, while the standard low-temperature weak localization and then weak antilocalization behaviour is revealed at T → 0. Magnetic transport investigations of the system are performed in the temperature range of 0.1–300 K and at magnetic fields up to 8 T, applied perpendicularly to the 2DEG plane. The experimental data are analyzed in terms of the multichannel Kondo model for d 0 magnetic materials and weak localization theory taking into account the spin-orbit interaction.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782620090067