Gallium-doped zinc oxide films with diverse nanomorphologies grown via sol–gel united spin coating technique

Some gallium-doped zinc oxide nanofilms (GZONFs) with diverse morphologies were produced on the p-type Si (100) substrate by the sol–gel united spin coating. The thermally annealed nanofilms were characterized using different techniques to determine the influence of various Ga contents (0–5%) on the...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2020-09, Vol.126 (9), Article 701
Main Authors: Al-Asedy, Hayder J., Al-khafaji, Shuruq A.
Format: Article
Language:English
Subjects:
Applied physics
Carrier density
Characterization and Evaluation of Materials
Condensed Matter Physics
Electron mobility
Gallium
Hall effect
Machines
Manufacturing
Materials science
Morphology
Nanotechnology
Optical and Electronic Materials
Oxide coatings
Physics
Physics and Astronomy
Processes
Silicon substrates
Sol-gel processes
Spin coating
Surfaces and Interfaces
Thin Films
Zinc oxide
Zinc oxides
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Summary:Some gallium-doped zinc oxide nanofilms (GZONFs) with diverse morphologies were produced on the p-type Si (100) substrate by the sol–gel united spin coating. The thermally annealed nanofilms were characterized using different techniques to determine the influence of various Ga contents (0–5%) on their structures, morphologies, optical and electrical characteristics. The XRD patterns of the as-prepared nanofilms displayed the existence of the single-phase polycrystalline particles with varying sizes (55–36 nm). The band gap values of these GZONFs were ranged from 3.227–3.269 eV. The nanofilm produced with 1% of Ga exhibited the minimal electrical resistivity ≈ 4.6429 × 10 –3 Ω cm, highest carrier density ≈ 1.37648 × 10 20  cm −3 and Hall mobility ≈ 9.779 cm 2 /V s. It was shown that the overall properties of the proposed GZONFs can be customized by adjusting the concentration of Ga doping.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-020-03891-x