All-inkjet-printed high-performance flexible MoS2 and MoS2-reduced graphene oxide field-effect transistors

Two-dimensional (2D) materials have been utilized to design flexible field-effect transistors (FETs) with promising performance. However, flexible FETs still face challenges with poor switching features and ultra-low drive current. In this paper, a facile and repeatable large-area integration proces...

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Bibliographic Details
Published in:Journal of materials science 2020-09, Vol.55 (27), p.12969-12979
Main Authors: Jiang, Zhi, Xiao, Kuan, Chen, Jin-Ju, Wang, Yan, Xu, Zhao-Quan, Sowade, Enrico, Baumann, Reinhard R., Sheremet, Evgeniya, Rodriguez, Raul D., Feng, Zhe-Sheng
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Crystallography and Scattering Methods
Electrical properties
Electronic Materials
Field effect transistors
Graphene
Inkjet printing
Materials Science
Molybdenum disulfide
N-type semiconductors
Polymer Sciences
Semiconductor devices
Solid Mechanics
Transistors
Two dimensional materials
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Summary:Two-dimensional (2D) materials have been utilized to design flexible field-effect transistors (FETs) with promising performance. However, flexible FETs still face challenges with poor switching features and ultra-low drive current. In this paper, a facile and repeatable large-area integration process is presented for inkjet-printed FETs with 2D materials active channels and PI films as gate dielectrics. The MoS 2 FETs reported here exhibit n -type channel feature with an outstanding average subthreshold swing of 75 mV/dec, an on-state/off-state current ratio of 10 4 , and on-state current up to 10 μA at a power supply voltage of 3.0 V. Besides, MoS 2 –rGO FETs also exhibit n -type semiconductor features with good electrical properties by the inkjet-printing technology.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-020-04891-1