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Fullerene (C60)-modulated surface evolution in CH3NH3PbI3 and its role in controlling the performance of inverted perovskite solar cells

We report here the effect of fullerene (C 60 ) incorporation on the growth of CH 3 NH 3 PbI 3 perovskite crystals and the effect on photovoltaic performance of perovskite solar cells (PSCs) prepared in inverse geometry. Incorporation of C 60 induced the growth of larger gains and compact thin film o...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2020-07, Vol.31 (14), p.11150-11158
Main Authors: Patel, M. S., Chaudhary, Dhirendra K., Kumar, Pankaj, Kumar, Lokendra
Format: Article
Language:English
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Summary:We report here the effect of fullerene (C 60 ) incorporation on the growth of CH 3 NH 3 PbI 3 perovskite crystals and the effect on photovoltaic performance of perovskite solar cells (PSCs) prepared in inverse geometry. Incorporation of C 60 induced the growth of larger gains and compact thin film of perovskite with reduced defects, which led to its enhanced photovoltaic performance. Apart from that, C 60 also participates in transportation and collection of photo-generated electrons. The optimum incorporation of C 60 resulted in an impressive improvement in the power conversion efficiency (PCE) of champion PSC from 9.2 to 12.8%. Moreover, the C 60 -doped PSCs exhibited improved air stability compared to undoped devices. The enhanced PCE in C 60 -doped PSCs is a result of enhanced optical absorption and separation of photo-generated charge and their transportation in the active layer. Since the size of C 60 molecules is of the order of nm, they easily get filled into the perovskite voids and facilitate another percolation path ways for charge carriers to transport and suppress the recombination losses via passivating the recombination centres in perovskite layers. The compact perovskite layer with larger grains led to reduced inter-granular grain boundaries with reduced defects, which restricts the fast diffusion of moisture into active layer and resulted in improved stability in device performance.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-020-03664-5