A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part II: Experimental Verification

In the first part of this two-part article, a ladder transmission line model (LTLM), featuring elimination of parasitic metal resistances and high accuracy for extracting specific contact resistivity \rho _{\text {c}} , is developed and verified by simulation. In Part II, the LTLM is applied experi...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2020-07, Vol.67 (7), p.2690-2696
Main Authors: Xu, Haiwen, Wu, Ying, Yeo, Yee-Chia, Gong, Xiao
Format: Article
Language:English
Subjects:
Computer simulation
Electrical resistivity
Electrodes
Field effect transistors
Germanium
Ladder transmission line model (LTLM)
Nickel
parasitic resistances
Periodic structures
Resistance
specific contact resistivity
Transmission lines
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Summary:In the first part of this two-part article, a ladder transmission line model (LTLM), featuring elimination of parasitic metal resistances and high accuracy for extracting specific contact resistivity \rho _{\text {c}} , is developed and verified by simulation. In Part II, the LTLM is applied experimentally to Ni contacts formed on the heavily Ga-doped Ge 0.95 Sn 0.05 film. Two types of Ni/p + -Ge 0.95 Sn 0.05 LTLM structures, single-cell and multicell LTLMs, are fabricated. Ultralow \rho _{\text {c}} values of {8.6} \pm {2} \times {10}^{-{10}}\,\,\Omega {-}\text {cm}^{{2}} and {1.1} \pm {0.3} \times {10}^{-{9}}\,\,\Omega {-}\text {cm}^{{2}} are extracted from the single-cell and multicell LTLMs, respectively. The good agreement of the extracted \rho _{\text {c}} from the single-cell and multicell structures validates the \rho _{\text {c}} extraction by the LTLM. \rho _{\text {c}} is also extracted by using refined transmission line model (RTLM). In contrast, the extracted \rho _{\text {c}} by the RTLM is more than two times larger due to the ignored parasitic metal resistance. The proposed LTLM is a useful tool for an accurate assessment of \rho _{\text {c}} in advanced contact technology.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2020.2997313