Specifics of Heat Transfer in AlxGa1 – xN/GaN Heterostructures on Sapphire

The thermal conductivity of Al x Ga 1 –   x N/GaN heterostructures (0.05 ≤ x ≤ 1) fabricated on sapphire by molecular beam epitaxy is measured. The thermal conductivities of thin Al x Ga 1 –   x N and GaN films at room temperature are found. We analyze the concentration dependence of thermal conduct...

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Bibliographic Details
Published in:Physics of the solid state 2020-04, Vol.62 (4), p.722-726
Main Authors: Chernodubov, D. A., Maiboroda, I. O., Zanaveskin, M. L., Inyushkin, A. V.
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Conductivity
Gallium nitrides
Heat conductivity
Heat transfer
Heterostructures
Molecular beam epitaxy
Numerical models
Physics
Physics and Astronomy
Room temperature
Sapphire
Solid State Physics
Thermal conductivity
Thermal Properties
Thickness
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Summary:The thermal conductivity of Al x Ga 1 –   x N/GaN heterostructures (0.05 ≤ x ≤ 1) fabricated on sapphire by molecular beam epitaxy is measured. The thermal conductivities of thin Al x Ga 1 –   x N and GaN films at room temperature are found. We analyze the concentration dependence of thermal conductivity using a virtual crystal model for thermal conductivity. A numerical model with a localized heat source is built to model heat transfer in the considered structure, and the layer thicknesses optimal for achieving a high thermal conductivity of the structure of interest are identified.
ISSN:1063-7834
1090-6460
DOI:10.1134/S106378342004006X