On-Wafer Cryogenic Characterization Technique of an SIS-Based Frequency Up and Down Converter

This paper describes an on-wafer characterization system and calibration technique for frequency up and down converters based on a superconductor–insulator–superconductor (SIS) tunnel junction. The measurement system uses a 4-K probe station in combination with a vector network analyzer which allows...

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Bibliographic Details
Published in:Journal of low temperature physics 2020-04, Vol.199 (1-2), p.219-224
Main Authors: Kojima, Takafumi, Uzawa, Yoshinori, Shan, Wenlei, Kozuki, Yuto
Format: Article
Language:English
Subjects:
Calibration
Characterization and Evaluation of Materials
Condensed Matter Physics
Conversion
Frequency converters
Low temperature physics
Magnetic Materials
Magnetism
Measurement techniques
Network analysers
Physics
Physics and Astronomy
SIS (superconductors)
Tunnel junctions
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Summary:This paper describes an on-wafer characterization system and calibration technique for frequency up and down converters based on a superconductor–insulator–superconductor (SIS) tunnel junction. The measurement system uses a 4-K probe station in combination with a vector network analyzer which allows measurement of both up- and down-conversion gains and reflection coefficients. We employed and verified a scalar mixer calibration technique for accurate characterization of the conversion properties. We present the detailed measurement technique and verification using an SIS frequency converter sample.
ISSN:0022-2291
1573-7357
DOI:10.1007/s10909-020-02414-5