Liquid Phase Exfoliated Indium Selenide Based Highly Sensitive Photodetectors

Layered semiconductors of the IIIA–VIA group have attracted considerable attention in (opto)electronic applications thanks to their atomically thin structures and their thickness‐dependent optical and electronic properties, which promise ultrafast response and high sensitivity. In particular, 2D ind...

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Bibliographic Details
Published in:Advanced functional materials 2020-03, Vol.30 (13), p.n/a
Main Authors: Curreli, Nicola, Serri, Michele, Spirito, Davide, Lago, Emanuele, Petroni, Elisa, Martín‐García, Beatriz, Politano, Antonio, Gürbulak, Bekir, Duman, Songül, Krahne, Roman, Pellegrini, Vittorio, Bonaccorso, Francesco
Format: Article
Language:English
Subjects:
2D semiconductors
Exfoliation
Field effect transistors
Indium
indium selenide
Indium selenides
Infrared radiation
liquid phase exfoliation
Liquid phases
Materials science
Optical properties
Optoelectronic devices
photodetectors
Photometers
Phototransistors
Response time
Semiconductor devices
solution processed
spray coating
Thickness
Two dimensional materials
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Summary:Layered semiconductors of the IIIA–VIA group have attracted considerable attention in (opto)electronic applications thanks to their atomically thin structures and their thickness‐dependent optical and electronic properties, which promise ultrafast response and high sensitivity. In particular, 2D indium selenide (InSe) has emerged as a promising candidate for the realization of thin‐film field effect transistors and phototransistors due to its high intrinsic mobility (>102 cm2 V−1 s−1) and the direct optical transitions in an energy range suitable for visible and near‐infrared light detection. A key requirement for the exploitation of large‐scale (opto)electronic applications relies on the development of low‐cost and industrially relevant 2D material production processes, such as liquid phase exfoliation, combined with the availability of high‐throughput device fabrication methods. Here, a β polymorph of indium selenide (β‐InSe) is exfoliated in isopropanol and spray‐coated InSe‐based photodetectors are demonstrated, exhibiting high responsivity to visible light (maximum value of 274 A W−1 under blue excitation 455 nm) and fast response time (15 ms). The devices show a gate‐dependent conduction with an n‐channel transistor behavior. Overall, this study establishes that liquid phase exfoliated β‐InSe is a valid candidate for printed high‐performance photodetectors, which is critical for the development of industrial‐scale 2D material‐based optoelectronic devices. Spray coating interdigitated microelectrodes with an ink consisting of few layer InSe flakes, obtained by liquid phase exfoliation, produce highly sensitive and fast photodetectors, which respond to visible and NIR light. This work provides an industrially scalable and cost‐effective approach for the production of high‐performance optoelectronic devices.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201908427