Characteristics of the Te-based chalcogenide films dependently on the parameters of the PECVD process

Recently in Mochalov et al. (Opt Quant Electron 49(8):274–276, 2017; Plasma Chem Plasma Process 37(5):1417–1429, 2017; Superlattices Microstruct 111:173–180, 2017; Spectrochim Acta Part A Mol Biomol Spectrosc 191:211–216, 2018; New generation of materials for the near-mid IR sensors based on lead ch...

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Bibliographic Details
Published in:Optical and quantum electronics 2020-04, Vol.52 (4), Article 197
Main Authors: Mochalov, Leonid, Logunov, Alexander, Markin, Aleksey, Kitnis, Anna, Vorotyntsev, Vladimir
Format: Article
Language:English
Subjects:
Argon
Argon plasma
Arsenic
Chalcogenides
Characterization and Evaluation of Materials
Chemical vapor deposition
Computer Communication Networks
Crystallization
Electrical Engineering
Lasers
Lead tellurides
Low pressure
Low temperature
Morphology
Optical communication
Optical Devices
Optics
Phase composition
Photonics
Physics
Physics and Astronomy
Plasma
Plasma deposition
Plasma jets
Process parameters
Stoichiometry
Superlattices
Tellurium
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Summary:Recently in Mochalov et al. (Opt Quant Electron 49(8):274–276, 2017; Plasma Chem Plasma Process 37(5):1417–1429, 2017; Superlattices Microstruct 111:173–180, 2017; Spectrochim Acta Part A Mol Biomol Spectrosc 191:211–216, 2018; New generation of materials for the near-mid IR sensors based on lead chalcogenides. In: 21st international conference on transparent optical networks (ICTON), 2019) the possibility of preparation of telluride films of different stoichiometry and phase composition by plasma deposition where the high-pure elemental arsenic, lead and tellurium were utilized as the starting materials have been shown. This manuscript generalizes the results of investigations of main characteristics of Te-based binary As x Te 100−x and PbTe chalcogenide films prepared in low-temperature non-equilibrium RF (40.68 MHz) argon plasma discharge at low pressure (0.1 Torr). The surface morphology, structure and thermal crystallization behavior of the films obtained were studied in dependence on the plasma parameters of the deposition process and compared.
ISSN:0306-8919
1572-817X
DOI:10.1007/s11082-020-02312-w