Monolithic thin-film chalcogenide–silicon tandem solar cells enabled by a diffusion barrier

Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materials with prospects of a fully earth-abundant, stable and efficient tandem solar cell. Thin film chalcogenides (TFCs) suc...

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Bibliographic Details
Published in:Solar energy materials and solar cells 2020-04, Vol.207, p.110334, Article 110334
Main Authors: Hajijafarassar, Alireza, Martinho, Filipe, Stulen, Fredrik, Grini, Sigbjørn, López-Mariño, Simón, Espíndola-Rodríguez, Moises, Döbeli, Max, Canulescu, Stela, Stamate, Eugen, Gansukh, Mungunshagai, Engberg, Sara, Crovetto, Andrea, Vines, Lasse, Schou, Jørgen, Hansen, Ole
Format: Article
Language:English
Subjects:
Carrier lifetime
Chalcogenides
Copper zinc tin sulfide
CZTS
Diffusion
Diffusion barriers
Diffusion layers
Electric contacts
Electronics industry
High temperature
Minority carriers
Open circuit voltage
Perovskites
Photovoltaic
Photovoltaic cells
Recombination
Silicon
Solar cells
Sulfurization
Tandem
Thin films
Titanium nitride
TOPCon
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Summary:Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materials with prospects of a fully earth-abundant, stable and efficient tandem solar cell. Thin film chalcogenides (TFCs) such as the Cu2ZnSnS4 (CZTS) could be suitable top-cell materials. However, TFCs have the disadvantage that generally at least one high temperature step (>500 °C) is needed during the synthesis, which could contaminate the Si bottom cell. Here, we systematically investigate the monolithic integration of CZTS on a Si bottom solar cell. A thermally resilient double-sided Tunnel Oxide Passivated Contact (TOPCon) structure is used as bottom cell. A thin (
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2019.110334